Cypress CY7C1041G30-10BAJXE, 4Mbit asynchronous SRAM, 256K x 16 organization, 10 ns access time, 2.2V–3.6V supply, parallel interface, 48-TFBGA (6x8 mm), -40°C to 125°C operating temperature, tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 125°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 48-TFBGA |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 10ns |
The 10 ns access time is the decision spec for this SRAM. The write cycle time matches at 10 ns (word and page mode).
It is ROHS3 compliant, which covers the current European and Asian RoHS exemptions. Sourcing is through independent distribution.
The access time is 10 ns for both read and write operations.
This part is sourced to order against an RFQ. Availability and pricing are confirmed at quote time.