Infineon Technologies
Infineon CY7C1041G-10ZSXIT, 4Mbit Asynchronous SRAM, 256K x 16, Parallel Interface, 10 ns Access Time, 4.5V-5.5V Supply, -40°C to 85°C, 44-TSOP II (10.16mm width), Tape & Reel.
MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 4.5V ~ 5.5V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 10ns |
The Infineon CY7C1041G-10ZSXIT is a 4 Mbit asynchronous SRAM organized as 256K x 16 bits, with a 10 ns access time and a parallel interface.
The 10 ns access time and 10 ns write cycle time allow the SRAM to complete a read or write cycle in 10 ns.
It is ROHS3 compliant.
