CY7C1021DV33-10ZSXIT

Infineon Technologies

Infineon CY7C1021DV33-10ZSXIT, 1Mbit (64K x 16) asynchronous SRAM, 10 ns access time, parallel interface, 3V to 3.6V supply, -40°C to 85°C, 44-TSOP II package.

Infineon Technologies CY7C1021DV33-10ZSXIT
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[IN STOCK] In Stock: 51 pcs
$5.52/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CY7C1021DV33-10ZSXIT specifications
Parameter / AttributeSpecification / Value
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size1Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization64K x 16
Write cycle time - word, page10ns

Technical details

What this 1 Mbit asynchronous SRAM brings to the board

The Infineon CY7C1021DV33-10ZSXIT is a 1 Mbit asynchronous SRAM organized as 64K x 16 bits, with a 10 ns access time and a parallel interface. It operates from a 3V to 3.6V supply and is rated for the industrial temperature range of -40°C to 85°C, making it suitable for embedded systems that need fast, volatile data storage without a clock — think network processors, industrial controllers, or test equipment that cache lookup tables or packet buffers. The 44-TSOP II footprint is a common SRAM package, so layout reuse across board spins is straightforward.

10 ns access time — timing margin matters

Active production — no end-of-life scramble

The CY7C1021DV33-10ZSXIT is listed as Active, so Infineon is still manufacturing it.

CY7C1021DV33-10ZSXIT
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