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Infineon Technologies CY7C1021CV26-15BAET — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1021CV26-15BAET 1Mbit Async SRAM, 15 ns

MPNCY7C1021CV26-15BAET
Obsolete

Cypress CY7C1021CV26-15BAET, 1Mbit asynchronous SRAM, 64K x 16 organization, 15 ns access time, parallel interface, 2.5V–2.7V supply, -40°C to 125°C operating temperature, 48-VFBGA (6x8 mm) package, Tape & Reel.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1021CV26-15BAET specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage2.5V ~ 2.7V
Memory interfaceParallel
Operating temperature-40°C~125°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time15 ns
Memory size1Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization64K x 16
Write cycle time - word, page15ns

Product details

1Mbit asynchronous SRAM with 15 ns access — bus timing for 2.5V systems

The 15 ns access time means a bus master running at 66 MHz can complete a read cycle in one clock with zero wait states, assuming the address-to-data path stays within the timing budget. At higher clock rates, the 15 ns window starts to consume multiple cycles, so check the memory controller's setup/hold requirements against the part's output hold time.

The 125°C ceiling means the part can sit next to a hot CPU or power stage without derating the access time — though the 15 ns spec is typically measured at 25°C, and at 125°C the internal timing margins tighten. Budget an extra 2–3 ns for temperature derating if the system runs at the upper end of the range.

48-VFBGA package — board-level considerations

Housed in a 48-ball VFBGA (6x8 mm), this part uses a fine-pitch BGA footprint (0.5 mm ball pitch typical). The package is not hand-solderable; it requires a solder-paste stencil, reflow oven, and X-ray inspection for void detection. The small 6x8 mm body saves board space versus a TSOP-II, but the BGA's hidden solder joints make rework difficult.

The CY7C1021CV26-15BAET is marked obsolete by Cypress (now Infineon). For new designs, consider a pin-compatible 3.3V asynchronous SRAM in the same 48-VFBGA footprint if the system can tolerate a higher supply — though the 2.5V–2.7V supply range is the defining voltage domain, so a 3.3V part would require level shifters on the data bus.

Frequently asked questions

What is the direct replacement for CY7C1021CV26-15BAET?

The part is obsolete, and Cypress has not published a successor order code.

Can CY7C1021CV26-15BAET be replaced by a 3.3V SRAM?

Not directly. The CY7C1021CV26-15BAET operates from a 2.5V–2.7V supply. A 3.3V SRAM would exceed the absolute maximum ratings of the original part's voltage domain and would require level translation on all I/O lines if the rest of the system also runs at 2.5V. If the system can tolerate a 3.3V supply, a 3.3V asynchronous SRAM in the same 48-VFBGA footprint may be mechanically compatible, but the logic levels will not match without external level shifters.