Infineon Technologies CY7C1018DV33-10VXI asynchronous SRAM, 1Mbit (128K x 8), 10 ns access time, parallel interface, 3V-3.6V supply, -40°C to +85°C, 32-SOJ (0.300", 7.62mm width), Tube.
| Parameter / Attribute | Specification / Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tube |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 1Mbit |
| Memory format | SRAM |
| Case | 32-BSOJ (0.300\", 7.62mm Width) |
| Memory organization | 128K x 8 |
| Write cycle time - word, page | 10ns |
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Direct access to Shenzhen floor inventory, franchised allocation buffers, and factory bonded stock to resolve line-down shutdowns.
Standard factory-sealed packaging compliant with EIA-481 standards for automated high-speed SMT pick-and-place lines.
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The CY7C1018DV33-10VXI is a 1Mbit asynchronous SRAM organized as 128K x 8 bits, with a 10 ns access time that sets the read-cycle floor for the memory bus.
Fully ROHS3 compliant, the part ships in Tube packaging and carries the base product number CY7C1018 for cross-reference against other speed and temperature variants in the family.
The CY7C1018DV33-10VXI is organized as 128K words by 8 bits, giving a total density of 1 Mbit. The byte-wide data bus matches 8-bit microcontrollers and peripheral buses directly.
Infineon provides ROHS3 compliance certification for the CY7C1018DV33-10VXI. The part is also covered by the standard Infineon material declaration and conflict minerals reporting available on request.