CY7C1010DV33-10ZSXI

Infineon Technologies

Infineon CY7C1010DV33-10ZSXI, SRAM - Asynchronous, 2Mbit (256K x 8), Parallel Interface, 10 ns Access Time, 3V ~ 3.6V Supply, -40°C ~ 85°C, 44-TSOP II, Tray.

Infineon Technologies CY7C1010DV33-10ZSXI
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[IN STOCK] In Stock: 5 pcs
$6.58/ pc

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MOQ 1 · Tray · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CY7C1010DV33-10ZSXI specifications
Parameter / AttributeSpecification / Value
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size2Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization256K x 8
Write cycle time - word, page10ns

Technical details

256K x 8 asynchronous SRAM for byte-wide buses

The Infineon CY7C1010DV33-10ZSXI is a 2 Mbit asynchronous SRAM organized as 256K x 8 bits, with a 10 ns access time and a parallel interface. It operates from a 3V to 3.6V supply and is rated over the industrial temperature range of -40°C to 85°C. Packaged in a 44-TSOP II (10.16 mm width) surface-mount package, it is intended for use in embedded systems requiring fast, byte-wide scratchpad memory — typical applications include networking equipment, industrial controllers, and test instrumentation where deterministic read/write latency matters more than density.

256K x 8 organization — why it matters for your BOM

The byte-wide (x8) organization maps directly to the data bus of an 8-bit microcontroller or an FPGA with byte-enable lanes.

The 3V to 3.6V supply range runs from a standard 3.3V rail.

CY7C1010DV33-10ZSXI
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