256Kbit parallel SRAM — 70 ns read cycle, 5 V rail
The CY62256NLL-70SNIT is a 256 Kbit asynchronous SRAM from Infineon's MoBL® series, organized as 32K x 8 bits. The 70 ns access time sets the fastest read cycle the bus can tolerate — a 70 ns ceiling means the memory controller must stretch its read strobe to at least 70 ns or the data bus won't settle in time. If your board has migrated to 3.3 V, this part needs a separate regulator or a level translator on the address and data lines.
Active lifecycle — no last-time-buy pressure
Infineon lists the CY62256NLL-70SNIT as Active.
Parallel interface — no clock, no configuration
As an asynchronous parallel SRAM, it needs no clock, no refresh, and no initialization sequence. The chip-enable (CE), output-enable (OE), and write-enable (WE) pins control the bus directly — a bare-metal microcontroller or a CPLD can drive it with a few GPIOs. The write cycle time matches the read cycle at 70 ns for word and page operations. That means the write strobe width must also stay at 70 ns minimum — a common trap when a fast CPU tries to back-to-back writes without inserting wait states.