64-Mbit parallel SRAM in the MoBL® family
The Infineon CY62187EV30LL-55BAXI is a 64-Mbit static RAM organised as 4M x 16 bits, accessed through a parallel interface. It belongs to the MoBL® series, Infineon's low-power SRAM line designed for battery-backed or power-sensitive memory arrays in portable instrumentation, industrial controllers, and communications gear. The 48-ball FBGA (0.50 mm pitch, 0.80 mm ball diameter) requires a controlled impedance layout and a 4-layer PCB for clean power delivery at these edge rates. The tray packaging suggests the part is intended for pick-and-place assembly runs, not reel-fed high-volume lines.
Access timing and write-cycle detail
The write-cycle time — word and page modes — is also rated at 55 ns, meaning the bus can sustain a 18 MHz random-access rate. For burst or page-mode operations, the page write cycle time is the same, so sequential writes at that rate are supported. Because the part is volatile SRAM, no wear-leveling or erase-cycle management is needed — it is a straight read/write memory with no refresh requirement. This simplifies the firmware memory manager but means the data is lost when power drops below the retention threshold (typically 1.2 V for this process node).