32 Mbit async SRAM for industrial memory subsystems
The Infineon CY62177EV30LL-55BAXI is a 32 Mbit asynchronous SRAM from the MoBL® series, organized as 4M x 8 or 2M x 16 via the byte-enable pins. It operates from a 2.2 V to 3.7 V supply and delivers a 55 ns access time — the same figure governs both read and write cycles, which simplifies timing closure in a shared bus. The 48-FBGA (8x9.5 mm) package keeps the footprint compact — 0.75 mm ball pitch, so a standard 4-layer PCB with via-in-pad can fan out the address and data lines without a microvia stack.
Timing and bus-margin considerations
A typical 100 MHz ARM bus with 30 pF load per line sees about 2 ns of additional skew; the 55 ns window still leaves margin for a 50 ns memory controller setup time. Write cycle time is also 55 ns (word and page modes), so the write pulse width matches the read access — no need to stretch the write strobe separately. The part is fully static; no clock or refresh is required, which simplifies the glue logic for a legacy 8-bit or 16-bit microcontroller bus.
Supply range and standby power profile
The MoBL® series is optimized for low standby current; at 3.6 V the typical standby current is below 1 mA, which keeps the memory alive during a low-power sleep state without draining the backup battery. The part is active in production and ROHS3 compliant.