CY62167G30-45BVXI

Infineon Technologies · MoBL® Series

Infineon Technologies MoBL® series SRAM - Asynchronous, 16Mbit, 45 ns access time, 2.2V to 3.6V supply, -40°C to 85°C, 48-VFBGA (6x8) package, Tray.

Infineon Technologies CY62167G30-45BVXI
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$17.61/ pc

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Technical specifications

CY62167G30-45BVXI specifications
Parameter / AttributeSpecification / Value
SeriesMoBL®
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time45 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization2M x 8, 1M x 16
Write cycle time - word, page45ns

Technical details

16 Mbit asynchronous SRAM with 45 ns access

The CY62167G30-45BVXI is a 16 Mbit asynchronous SRAM from Infineon's MoBL® series, organised as 2M x 8 or 1M x 16 via a parallel interface. The 45 ns access time sets the ceiling for read-cycle latency — at 22 MHz equivalent, it fits bus architectures where the memory controller expects data within a single wait state on a typical 66 MHz local bus.

Package and board-fit: 48-VFBGA (6x8 mm)

Housed in a 48-ball VFBGA measuring 6x8 mm (supplier device package 48-VFBGA). The 0.75 mm ball pitch requires a four-layer PCB for fan-out on the inner rows — two-layer breakout is possible only if the outer two rows carry all address/data lines and the inner balls are limited to VDD and VSS.

CY62167G30-45BVXI
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