8 Mbit parallel SRAM for cache and buffer slots
The CY62158EV30LL-45BVXI is an 8 Mbit static RAM organized as 1M x 8, accessed through a parallel address/data bus with a 45 ns access time — this is the timing window the controller must meet to read or write without wait states.
Bus timing and supply compatibility
The 45 ns access time and 45 ns write cycle time set the bus speed ceiling — a host controller running at 22 MHz or slower can perform back-to-back reads without inserting wait cycles; above that the access time becomes the critical path. A 2.2 V supply voltage places this SRAM in the low-voltage parallel memory class, compatible with 1.8 V to 2.5 V logic domains without an external level translator on the data bus, though the address and control lines must stay within the same range.
Package and board integration
Housed in a 48-ball VFBGA (Very Fine-pitch Ball Grid Array) supplied in tray format, the package footprint requires a solder-paste stencil with 0.35 mm aperture diameter and a reflow profile that peaks at 245°C — typical for lead-free assembly.