8 Mbit async SRAM, 55 ns — the timing ceiling
The CY62157EV30LL-55ZSXE is an 8 Mbit asynchronous SRAM organized as 512K x 16, with a 55 ns access time. That 55 ns sets the bus read/write cycle floor — the processor must wait at least that long after asserting address before data is valid on the I/O pins.
Industrial temp and the package that fits
Write cycle time matches read: 55 ns word and page writes. Page-mode writes let you burst sequential addresses at the same 55 ns rate without de-asserting chip enable between writes, which improves throughput on a memory controller that supports page access.
Active — no end-of-life pressure
Infineon lists this part as Active (current production). ROHS3 compliant.
