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Infineon Technologies CY62157DV20L-70BVI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY62157DV20L-70BVI SRAM, 8Mbit, 70ns, 48VFBGA

MPNCY62157DV20L-70BVI
Active

Infineon Technologies MoBL2™ SRAM, 8Mbit, 512K x 16, Parallel interface, 70 ns access time, 1.65 V supply, -40°C to 85°C, 48-VFBGA package, Bulk.

$3.13Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY62157DV20L-70BVI specifications
ParameterValue
SeriesMoBL2™
InterfaceParallel
MountingSurface Mount
Operating temperature high-40°C to 85°C (TA)
Frame_size8Mbit
Access time70 ns
Memory typeVolatile
Package_typeBulk
Memory formatSRAM
StatusActive
Supply voltage1.65
Memory organization512K x 16
Write cycle time - word, page70ns

Product details

8 Mbit parallel SRAM for low-power data buffering

The Infineon CY62157DV20L-70BVI is an 8 Mbit (512K x 16) parallel SRAM from the MoBL2™ series, designed for applications where low standby current and a 1.65 V supply rail are critical — think battery-backed cache, industrial data loggers, or portable instrumentation that must hold a working buffer across sleep cycles. With a 70 ns access time, this part reads or writes a 16-bit word in one bus cycle at that speed; the 70 ns write cycle time for word and page operations means the memory can keep up with a moderate-speed microcontroller without wait states.