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Infineon Technologies CY62148GN-45SXI — Discrete Semiconductors

CY62148GN-45SXI Infineon MoBL 4Mbit Async SRAM, 45ns

MPNCY62148GN-45SXI
End of Life

Infineon Technologies MoBL® series SRAM - Asynchronous, 4Mbit (512K x 8), Parallel interface, 45 ns access time, 4.5V ~ 5.5V supply, -40°C ~ 85°C, 32-SOIC (0.445", 11.30mm Width), Tube.

$5.35Ref. price · indicative, final on quote
Packaging32-SOIC (0.445", 11.30mm Width)
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CY62148GN-45SXI Technical Specifications
ParameterValue
SeriesMoBL®
Memory typeVolatile
Mounting typeSurface Mount
Voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTube
TechnologySRAM - Asynchronous
Access time45 ns
Memory size4Mbit
Memory formatSRAM
Case32-SOIC (0.445\", 11.30mm Width)
Memory organization512K x 8
Write cycle time - word, page45ns

Product details

4Mbit async SRAM with 45 ns access — BOM-fit for legacy parallel buses

The CY62148GN-45SXI is a 4Mbit asynchronous SRAM organized as 512K x 8 bits, accessed through a parallel interface. The 45 ns access time and 45 ns write cycle time (word, page) set the bus timing floor — the memory controller must accommodate this window for both read and write operations. This matters for bus-level compatibility: if the rest of the system runs at 3.3V, a level translator between the memory and the controller is needed.

Active lifecycle and compliance — no end-of-life worry for new designs

The MoBL® series branding indicates this is part of Infineon's low-power asynchronous SRAM family, which typically features reduced standby current — useful for battery-backed or power-sensitive applications where the memory must retain data with minimal draw.