4 Mbit async SRAM in a 48-ball BGA
The CY62147EV18LL-55BVXI is a 4 Mbit asynchronous SRAM from Infineon's MoBL® series, organized as 256K x 16 bits. It runs on a 1.65 V to 2.25 V supply rail and delivers a 55 ns access time — fast enough for cache or working memory in embedded systems that don't need the complexity of a synchronous interface. It's a surface-mount part — not something you swap in the field without a hot-air station and a steady hand.
Supply and temperature envelope
The 1.65 V to 2.25 V supply range lets this SRAM work with 1.8 V logic families directly, without a level shifter on the address and data lines.
Board integration notes
The 48-VFBGA (6x8 mm) package has a 0.5 mm ball pitch — typical for this density. The supplier device package is 48-VFBGA (6x8), so the footprint matches the standard JEDEC outline for 48-ball BGA SRAMs. Write cycle time matches the read access at 55 ns — no penalty for mixed read/write patterns. The parallel interface is straightforward: CE#, OE#, WE# control, with byte-select for the upper and lower byte lanes on the 16-bit bus.