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Infineon Technologies CY62128DV30LL-70ZAXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY62128DV30LL-70ZAXI Infineon 1Mbit SRAM, 70ns, 32-TSOP

MPNCY62128DV30LL-70ZAXI
End of Life

Infineon Technologies MoBL® asynchronous SRAM, 1Mbit (128K x 8), 70 ns access, 2.2 V to 3.6 V, -40°C to +85°C, 32-TFSOP (0.465", 11.80 mm Width), Bulk.

$2.17Ref. price · indicative, final on quote
Packaging32-TFSOP (0.465", 11.80mm Width)
RoHSROHS3 Compliant
SeriesMoBL®
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY62128DV30LL-70ZAXI specifications
ParameterValue
SeriesMoBL®
Memory typeVolatile
MountingSurface Mount
Voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageBulk
TechnologySRAM - Asynchronous
Access time70 ns
Memory size1Mbit
Memory formatSRAM
Case32-TFSOP (0.465\", 11.80mm Width)
Memory organization128K x 8
Write cycle time - word, page70ns

Product details

70 ns access, 128K x 8 — the read-cycle ceiling

The CY62128DV30LL-70ZAXI is a 1 Mbit asynchronous SRAM from Infineon's MoBL low-power series, organized 128K x 8 with a 70 ns access time. That 70 ns figure sets the fastest read cycle the bus master can run without inserting wait states — at a 10 MHz bus clock (100 ns period) the SRAM responds within the first cycle, so no extra wait penalty.

Package and board-fit note

Housed in a 32-TFSOP (0.465-inch body width, 11.80 mm) — the same footprint as the industry-standard 32-TSOP. The 0.50 mm pin pitch and surface-mount leads suit a two-layer board if the decoupling caps sit close to the supply pins; a four-layer stack with a dedicated VDD plane is better for noise margin on the parallel bus. Write cycle time matches read at 70 ns (word and page mode), so the bus timing is symmetrical — no need to stretch the write strobe beyond the read pulse width.