The Infineon CY15B102N-ZS60XA is a 2Mbit parallel FRAM (Ferroelectric RAM) from the Automotive, AEC-Q100, F-RAM™ series. It stores 128K x 16 bits of non-volatile data with a 90 ns access time and a 90 ns write cycle — no page or byte write delays. The parallel interface makes it a direct drop-in for legacy SRAM or battery-backed SRAM sockets, but with the advantage of non-volatility: data survives power loss without a backup battery. It is qualified to AEC-Q100, so it is rated for automotive under-hood and chassis-domain environments, and its -40°C to 85°C temperature range also suits industrial motor drives, outdoor telecom, and factory automation controllers.
The 90 ns access time and 90 ns write cycle are the same figure, so read and write cycles are symmetric. For a parallel memory, this is the window the host controller has to latch data after asserting the address.
There is no official second source listed, but the parallel FRAM footprint is shared across the Infineon (formerly Cypress) F-RAM family, so a pin-compatible density upgrade (e.g., 4Mbit) may be possible without a board spin — verify the pinout and timing before committing.