What this NVSRAM brings to the bus
The Infineon CY14V116N-BZ30XI is a 16Mbit non-volatile SRAM organized as 1M x 16 bits with a parallel interface and a 30 ns access time. It stores data without a battery—the NVSRAM cell combines the read/write speed of a standard SRAM with on-chip non-volatile elements that hold the contents at power-down. This makes it a direct fit for applications that need fast random access and reliable data retention across power cycles: industrial controllers, RAID cache buffers, networking equipment, and instrumentation that logs configuration or calibration data.
30 ns access — timing headroom for the bus
The 30 ns access time is the cycle the part needs to present valid data after the address is stable.
Supply range and temperature grade
The supply range spans 1.7 V to 3.6 V. The operating temperature range is -40°C to 85°C.
Package and mounting
The part is supplied in a 165-ball LBGA (FBGA) with a 15 x 17 mm body. It is surface-mount only, so the PCB footprint needs a fine-pitch BGA land pattern with via-in-pad or microvia escape routing for the inner balls.
Lifecycle and sourcing posture
The CY14V116N-BZ30XI carries an Active lifecycle status and is ROHS3 compliant.