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Infineon Technologies CY14B108N-ZSP45XI — Logic ICs

Infineon CY14B108N-ZSP45XI NVSRAM, 8Mbit, 45 ns, 54-TSOP II

MPNCY14B108N-ZSP45XI
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Infineon CY14B108N-ZSP45XI, NVSRAM (Non-Volatile SRAM), 8Mbit (512K x 16), Parallel Interface, 45 ns Access Time, 2.7V to 3.6V Supply, -40°C to 85°C, 54-TSOP II, Tray.

$52.05Ref. price · indicative, final on quote
Packaging54-TSOP (0.400", 10.16mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

CY14B108N-ZSP45XI Technical Specifications
ParameterValue
Memory typeNon-Volatile
Mounting typeSurface Mount
Voltage2.7V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologyNVSRAM (Non-Volatile SRAM)
Access time45 ns
Memory size8Mbit
Memory formatNVSRAM
Case54-TSOP (0.400\", 10.16mm Width)
Memory organization512K x 16
Write cycle time - word, page45ns

Product details

NVSRAM that keeps data without a battery

The Infineon CY14B108N-ZSP45XI is an 8 Mbit non-volatile SRAM (NVSRAM) organized as 512K x 16, with a parallel interface and a 45 ns access time. It combines the read/write speed of SRAM with on-chip non-volatile storage, so it retains data through power loss without an external battery backup. This makes it a direct fit for industrial controllers, telecom line cards, and metering equipment where configuration logs or calibration constants must survive unplanned power cycles.

For a 16-bit controller running at 20 MHz to 33 MHz, this typically allows zero-wait-state reads if the controller's memory interface timing closes within that window. At higher bus speeds (above 40 MHz) you will likely need a single wait state, so check the controller's tACC requirement against the 45 ns spec before committing the layout.

No battery, no worry — the NVSRAM advantage

Standard SRAM loses data when power drops, forcing designers to add a battery or supercapacitor and a power-fail detection circuit. The CY14B108N-ZSP45XI eliminates that: its internal non-volatile elements store the SRAM array on power-down and restore it on power-up, all within the same 45 ns access cycle. That saves board space, removes battery-replacement maintenance, and improves reliability in remote or sealed enclosures.

It comes in a 54-TSOP II surface-mount package (10.16 mm body width).

Supply range and write timing

The write cycle time (word or page) is also 45 ns, so read and write cycles run at the same speed — no asymmetric penalty when updating configuration tables or logging data.

Frequently asked questions

Does CY14B108N-ZSP45XI require an external battery backup?

No. The CY14B108N-ZSP45XI is an NVSRAM (non-volatile SRAM) that retains data internally through power loss without any external battery or supercapacitor. The non-volatile storage is built into the chip.

Is CY14B108N-ZSP45XI RoHS compliant?

Yes, it is ROHS3 compliant, meeting the latest RoHS directive for lead-free and restricted-substance limits.

What is the difference between NVSRAM and standard SRAM?

Standard SRAM is volatile — it loses data when power is removed. NVSRAM combines an SRAM core with on-chip non-volatile storage, so data survives power cycles without a battery. The CY14B108N-ZSP45XI offers the same 45 ns read/write speed as fast SRAM but with non-volatile retention.