8 Mbit NVSRAM — no battery, no worry
The CY14B108K-ZS25XI: 8 Mbit NVSRAM organised as 1M x 8 with a parallel interface. 25 ns access time. Supply range is 2.7 V to 3.6 V. Industrial temperature range -40°C to 85°C. Housed in 44-TSOP II.
25 ns access — what it buys you
25 ns access time. On a 40 MHz bus, data arrives within one clock cycle. Write cycle time is also 25 ns for a word or page operation, so the store completes in a single bus cycle. That matters for real-time parameter logging where the controller cannot stall for tens of microseconds.
NVSRAM vs battery-backed SRAM
The CY14B108K-ZS25XI stores data in on-chip non-volatile elements, not in a battery-backed SRAM cell. That means no battery replacement schedule, no battery disposal compliance, and no risk of data loss when the battery voltage dips below the retention threshold. The trade-off is a finite number of store cycles (typically 1 million) — fine for configuration and calibration data that changes infrequently, not for a high-frequency write cache.
Active lifecycle — no LTB clock ticking
Active lifecycle status. ROHS3 compliant.