Infineon CY14B104NA-ZS25XI, NVSRAM (Non-Volatile SRAM), 4 Mbit (256K x 16), parallel interface, 25 ns access time, 2.7 V to 3.6 V supply, -40°C to 85°C, 44-TSOP II tray.
| Parameter / Attribute | Specification / Value |
|---|---|
| Memory type | Non-Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.7V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Access time | 25 ns |
| Memory size | 4Mbit |
| Memory format | NVSRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 25ns |
Factory lead times blocking production? We lock verified brand-new original stock in Shenzhen within 2 hours.
Direct access to Shenzhen floor inventory, franchised allocation buffers, and factory bonded stock to resolve line-down shutdowns.
Standard factory-sealed packaging compliant with EIA-481 standards for automated high-speed SMT pick-and-place lines.
High-resolution photos of original reel labels, 2D DataMatrix, and pin coplanarity sent via WhatsApp/Telegram before you release wire payment.
The CY14B104NA-ZS25XI is a 4 Mbit NVSRAM from Infineon that combines SRAM read/write speed with non-volatile storage. The 25 ns access time means the part keeps up with a fast parallel bus. Internally, the array is organised as 256K x 16, so a single chip delivers a 16-bit word per cycle.
The 44-TSOP II package is a surface-mount footprint — a standard layout for parallel memory on two-layer boards.
As an NVSRAM, it offers SRAM-like endurance for the SRAM array — effectively unlimited read/write cycles during normal operation. The non-volatile storage (shadowing to the SONOS cells) has a finite endurance, but it is specified for millions of store cycles, far exceeding the needs of typical firmware-shadow or data-logging applications.