200 V N-channel SIPMOS MOSFET in TO-220
The Infineon BUZ73AHXKSA1 is a 200 V N-channel power MOSFET from the SIPMOS® series, rated for 5.5 A continuous drain current at 25 °C case temperature. Housed in a standard TO-220-3 through-hole package (PG-TO220-3-1), it delivers 40 W maximum power dissipation. Input capacitance measures 530 pF at 25 V drain-source, a moderate figure that keeps gate-drive losses manageable in hard-switching applications up to low hundreds of kHz.
Gate drive and threshold — what to watch
Maximum gate threshold voltage is 4 V at 1 mA drain current. Maximum gate-source voltage is ±20 V.
No NRND or EOL notice applies.
