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Infineon Technologies BUZ73AHXKSA1
Infineon Technologies

BUZ73AHXKSA1 SIPMOS N-Channel MOSFET, 200V 5.5A TO-220

MPNBUZ73AHXKSA1
End of Life

Infineon SIPMOS® BUZ73AHXKSA1 N-channel power MOSFET, 200 V drain-source, 5.5 A continuous drain, 600 mOhm on-resistance at 10 V gate drive, TO-220-3 through-hole package, -55 to 150 °C junction temperature.

$0.39Ref. price · indicative, final on quote
BUZ73AHXKSA1 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BUZ73AHXKSA1 Technical Specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.5A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs600mOhm @ 4.5A, 10V
Input capacitance (Ciss) (Max) @ vds530 pF @ 25 V

Product details

200 V N-channel SIPMOS MOSFET in TO-220

The Infineon BUZ73AHXKSA1 is a 200 V N-channel power MOSFET from the SIPMOS® series, rated for 5.5 A continuous drain current at 25 °C case temperature. Housed in a standard TO-220-3 through-hole package (PG-TO220-3-1), it delivers 40 W maximum power dissipation. The 600 mOhm maximum on-resistance is specified at 10 V gate drive with 4.5 A drain current — the drive voltage required for minimum Rds(on). The junction temperature range spans -55 to 150 °C, qualifying this part for industrial, automotive under-hood, and military-grade environments where wide thermal swings are expected. Input capacitance measures 530 pF at 25 V drain-source, a moderate figure that keeps gate-drive losses manageable in hard-switching applications up to low hundreds of kHz.

Gate drive and threshold — what to watch

Maximum gate threshold voltage is 4 V at 1 mA drain current. A 10 V gate drive is the specified condition for the rated 600 mOhm on-resistance. Maximum gate-source voltage is ±20 V.

Lifecycle and sourcing

No NRND or EOL notice applies. This is a standard-catalog SIPMOS® part, not a phase-out line item — it can be specified into new BOMs without LTB risk.

Frequently asked questions

What is the equivalent or replacement for BUZ73AHXKSA1?

The BUZ73AHXKSA1 is the standard TO-220-3 variant of the BUZ73A die. Within the same SIPMOS® 200 V N-channel family, parts share the same 5.5 A / 600 mOhm ratings but differ in package (e.g., D2PAK surface-mount variants). For a direct pin-compatible drop-in, stick with the BUZ73AHXKSA1 order code — no official cross-reference to a second-source MPN is recorded in this listing.

Where can I download the BUZ73AHXKSA1 datasheet?

The Infineon datasheet for the BUZ73A series (including the BUZ73AHXKSA1) is available from the manufacturer's document portal. The product title and description reference the SIPMOS® N-channel power MOSFET family.

What is the difference between BUZ73AHXKSA1 and BUZ73A?

The BUZ73AHXKSA1 is the specific order code for the TO-220-3 through-hole variant of the BUZ73A die. The 'HXKSA1' suffix denotes the Infineon packaging code for this lead form and reel/tube configuration. Electrical ratings (200 V, 5.5 A, 600 mOhm) are identical across the BUZ73A family; the difference is package and shipping medium only.