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Infineon Technologies BUZ32HXKSA1

Infineon BUZ32HXKSA1 N-Channel Power MOSFET, 200 V, 9.5 A

MPNBUZ32HXKSA1
End of Life

Infineon SIPMOS N-Channel Power MOSFET, BUZ32HXKSA1, 200 V Vdss, 9.5 A continuous drain, 400 mOhm Rds(on) at 6 A, 10 V, TO-220-3 through-hole package, -55°C to 150°C operating junction temperature.

$0.55Ref. price · indicative, final on quote
Infineon Technologies BUZ32HXKSA1 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BUZ32HXKSA1 specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9.5A (Tc)
Power dissipation75W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs400mOhm @ 6A, 10V
Input capacitance (Ciss) (Max) @ vds530 pF @ 25 V

Product details

200 V N-channel MOSFET in TO-220-3 — active and available

The TO-220-3 through-hole package (PG-TO220-3) suits conventional heatsink mounting in power stages where surface-mount parts would struggle with thermal dissipation.

The 400 mOhm Rds(on) at Vgs=10 V and Id=6 A sets the conduction loss at 2.4 W at that operating point. With a 75 W maximum power dissipation at the case, the part can handle pulsed currents well above the 9.5 A continuous rating, provided the junction stays within the -55 °C to 150 °C range.

Frequently asked questions

What is the equivalent or replacement for BUZ32HXKSA1?

No official direct replacement is listed. The IPD50R950CEAUMA1 is a 500 V CoolMOS N-channel MOSFET in a surface-mount DPAK package — it operates at a higher voltage but has a higher 950 mOhm Rds(on) and different footprint. It is not a pin-compatible drop-in for the BUZ32HXKSA1.