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Infineon Technologies BUZ32HXKSA1
Infineon Technologies

Infineon BUZ32HXKSA1 N-Channel Power MOSFET, 200 V, 9.5 A

MPNBUZ32HXKSA1
End of Life

Infineon SIPMOS N-Channel Power MOSFET, BUZ32HXKSA1, 200 V Vdss, 9.5 A continuous drain, 400 mOhm Rds(on) at 6 A, 10 V, TO-220-3 through-hole package, -55°C to 150°C operating junction temperature.

$0.55Ref. price · indicative, final on quote
BUZ32HXKSA1 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BUZ32HXKSA1 Technical Specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9.5A (Tc)
Power dissipation75W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs400mOhm @ 6A, 10V
Input capacitance (Ciss) (Max) @ vds530 pF @ 25 V

Product details

200 V N-channel MOSFET in TO-220-3 — active and available

The TO-220-3 through-hole package (PG-TO220-3) suits conventional heatsink mounting in power stages where surface-mount parts would struggle with thermal dissipation.

The 400 mOhm Rds(on) at Vgs=10 V and Id=6 A sets the conduction loss at 2.4 W at that operating point. With a 75 W maximum power dissipation at the case, the part can handle pulsed currents well above the 9.5 A continuous rating, provided the junction stays within the -55 °C to 150 °C range. The ±20 V maximum gate rating gives headroom for a 12 V or 15 V gate drive rail, but the 10 V drive voltage for minimum Rds(on) is the target for the gate driver design.

Frequently asked questions

What is the equivalent or replacement for BUZ32HXKSA1?

No official direct replacement is listed. The IPD50R950CEAUMA1 is a 500 V CoolMOS N-channel MOSFET in a surface-mount DPAK package — it operates at a higher voltage but has a higher 950 mOhm Rds(on) and different footprint. It is not a pin-compatible drop-in for the BUZ32HXKSA1.