Infineon SIPMOS® BUZ32H3045A, N-Channel Power MOSFET, 200 V Vdss, 9.5 A continuous drain, 400 mOhm Rds(on) at 10 V, TO-263-3 (D²Pak) surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SIPMOS® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9.5A (Tc) |
| Power dissipation | 75W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 400mOhm @ 6A, 10V |
| Input capacitance (Ciss) (Max) @ vds | 530 pF @ 25 V |
The PG-TO263-3 (D²Pak) package has two leads plus the tab, which is the drain terminal. The 530 pF input capacitance at 25 V drain bias is modest, so the gate drive current requirement is low even at switching frequencies above 100 kHz.
Yes, the BUZ32H3045A is ROHS3 compliant.