The Infineon BUZ30AH3045A is a 200 V N-channel power MOSFET from the SIPMOS® family, built on a metal-oxide semiconductor process.
Package and mounting
The 130 mOhm Rds(on) at 10 V gate drive sets the conduction loss at a given load. At 13.5 A, that's about 24 W of dissipation — the 125 W package power limit gives thermal headroom, but the junction-to-case thermal path through the TO-263 tab needs a decent copper area and a via stitch to the inner plane. The 1900 pF input capacitance at 25 V drain-source is moderate; the gate driver sees a manageable charge, so switching losses at 50–100 kHz are reasonable without a heroic gate-drive IC. The 4 V gate threshold at 1 mA means a 10 V drive is the safe choice to achieve the rated Rds(on); a 5 V logic-level gate signal won't fully enhance the channel.
The official series is SIPMOS®, Infineon's own high-voltage MOSFET platform, so the datasheet and process support are current.
Surface-mount TO-263 — board-level fit
The TO-263-3 (D²Pak) surface-mount package suits automated assembly lines.