Skip to main content
Infineon Technologies BUZ30A H3045A
Infineon Technologies

BUZ30A H3045A SIPMOS N-Channel MOSFET, 200V 21A TO-263

MPNBUZ30A H3045A
End of Life

Infineon SIPMOS series, N-Channel Power MOSFET, BUZ30A H3045A, 200 V Vdss, 21 A continuous drain, 130 mOhm Rds(on) at 13.5 A, 10 V drive, TO-263-3 (D2Pak), -55 to 150 °C operating junction temperature.

$0.69Ref. price · indicative, final on quote
BUZ30A H3045A datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BUZ30A H3045A Technical Specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs130mOhm @ 13.5A, 10V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 25 V

Product details

The Infineon BUZ30A H3045A is a SIPMOS N-channel power MOSFET in a TO-263-3 (D2Pak) surface-mount package.

130 mOhm Rds(on) — sizing the heatsink for a 10 A load

On-resistance is specified at 130 mOhm maximum with 13.5 A drain current and 10 V gate drive. At a 10 A continuous load, conduction loss is I²R = 10² × 0.13 = 13 W. With a maximum junction temperature of 150 °C and a power dissipation rating of 125 W (case temperature referenced), the part can handle 13 W with a properly sized heatsink — the TO-263 tab is the primary thermal path, and a copper-plane area on the PCB or an external heatsink is required to keep the junction below 150 °C at a 10 A steady-state load.

Frequently asked questions

Does the BUZ30A H3045A require a heatsink for a continuous 10 A load?

Yes. At 10 A continuous drain current, conduction loss is about 13 W (I² × 130 mOhm). The maximum power dissipation is 125 W at the case, but without a heatsink the junction temperature will exceed the 150 °C maximum.

Can the BUZ30A H3045A be used in a 48 V switching supply?

Yes. The 200 V drain-source rating provides more than 3× margin above a 48 V nominal rail, even accounting for switching overshoot. The 1900 pF input capacitance at 25 V drain-source is moderate — the gate driver must supply the charge for the target switching frequency, but the 10 V drive voltage is standard for this class of MOSFET.

Is the BUZ30A H3045A RoHS compliant and lead-free?

The evidence does not list a RoHS compliance status or lead-free finish explicitly. For a definitive answer, verify the date-code-specific RoHS certificate from the manufacturer or request it with your RFQ.