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Infineon Technologies BUZ30AH3045A — Discrete Semiconductors

Infineon BUZ30AH3045A SIPMOS N-Channel MOSFET, 200 V, 21 A

MPNBUZ30AH3045A
End of Life

Infineon SIPMOS® N-Channel MOSFET, 200 V drain-source, 21 A continuous drain at 25°C, 130 mOhm Rds(on) at 10 V gate drive, TO-263-3 (D²Pak) surface-mount package, -55°C to 150°C junction temperature.

$0.68Ref. price · indicative, final on quote
Infineon Technologies BUZ30AH3045A datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BUZ30AH3045A specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs130mOhm @ 13.5A, 10V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 25 V

Product details

The Infineon BUZ30AH3045A is a 200 V N-channel power MOSFET from the SIPMOS® family, built on a metal-oxide semiconductor process.

At 13.5 A, that's about 24 W of dissipation — the 125 W package power limit gives thermal headroom, but the junction-to-case thermal path through the TO-263 tab needs a decent copper area and a via stitch to the inner plane. The 4 V gate threshold at 1 mA means a 10 V drive is the safe choice to achieve the rated Rds(on); a 5 V logic-level gate signal won't fully enhance the channel.

The official series is SIPMOS®, Infineon's own high-voltage MOSFET platform, so the datasheet and process support are current.

Surface-mount TO-263 — board-level fit

The TO-263-3 (D²Pak) surface-mount package suits automated assembly lines.

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