BUZ100S - Infineon Technologies
MPNBUZ100S
End of Life
N-CHANNEL POWER MOSFET
$0.51Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSRoHS non-compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SIPMOS® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 77A (Tc) |
| Power dissipation | 170W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 130µA |
| Rds on (Max) @ id, vgs | 15mOhm @ 55A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2375 pF @ 25 V |