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Infineon Technologies BTS132E3129NKSA1 — Logic ICs
Infineon Technologies

Infineon BTS132E3129NKSA1 N-Channel MOSFET, 60 V, 24 A

MPNBTS132E3129NKSA1
End of Life

Infineon TEMPFET® series, BTS132E3129NKSA1, N-Channel MOSFET, 60 V Vdss, 24 A Id, 65 mOhm Rds(on) at 4.5 V, TO-220-3 package, -55°C to 150°C junction.

$4.5Ref. price · indicative, final on quote
BTS132E3129NKSA1 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BTS132E3129NKSA1 Technical Specifications
ParameterValue
SeriesTEMPFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation75W
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs65mOhm @ 12A, 4.5V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 25 V

Product details

What this TEMPFET® N-channel MOSFET does in a power stage

The Infineon BTS132E3129NKSA1 is a TEMPFET® series N-channel MOSFET in a TO-220-3 through-hole package. The 4.5 V drive voltage means it can be turned on hard by a 5 V logic output or a standard gate-driver IC without a separate boost supply.

The 65 mOhm maximum on-resistance is specified at 4.5 V gate-to-source with 12 A drain current. The ±20 V maximum gate rating gives headroom if you use a 12 V gate-drive rail for lower Rds(on) — the datasheet curve will show the improvement, but the headline number at 4.5 V already covers most 12 V and 24 V industrial loads.

Temperature range and package — where it fits physically

The TO-220-3 package (PG-TO220-3-1) bolts to a heatsink or chassis for thermal management; the 75 W maximum power dissipation assumes adequate heatsinking. Through-hole mounting simplifies hand assembly and rework in prototype or low-volume production runs.

Frequently asked questions

What is the difference between BTS132E3129NKSA1 and BTS132E3129?

The NKSA1 suffix indicates the specific packaging and reel configuration — the die and electrical ratings (60 V Vdss, 24 A Id, 65 mOhm Rds(on)) are the same. The NKSA1 variant ships in bulk (tube) rather than tape-and-reel, which matters for through-hole assembly lines that feed from tubes.

Can I use BTS132E3129NKSA1 as a replacement for IRFZ44N?

Both are N-channel TO-220 MOSFETs rated for 60 V drain-to-source, but the IRFZ44N typically specifies a higher continuous current (49 A) and lower Rds(on) (17.5 mOhm) at 10 V gate drive. The BTS132E3129NKSA1's 65 mOhm at 4.5 V means higher conduction loss at the same current; verify thermal margin and gate-drive voltage in your circuit before substituting.