Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS™ BSZ900N20NS3GATMA1, N-Channel MOSFET, 200 V Vdss, 15.2 A Id, 90 mOhm Rds(on) at 10 V, 11.6 nC Qg, -55 to 150 °C, PG-TSDSON-8 package.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 15.2A (Tc) |
| Power dissipation | 62.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 30µA |
| Rds on (Max) @ id, vgs | 90mOhm @ 7.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 11.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 920 pF @ 100 V |
Input capacitance is 920 pF at 100 V drain bias, which keeps the Miller plateau short and limits cross-conduction losses in hard-switched topologies.
Maximum power dissipation is 62.5 W at case temperature Tc=25 °C. For continuous 15.2 A operation, a 2 oz copper pour of at least 2 in² is recommended to keep the junction below 125 °C.
It is ROHS3 compliant.
