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Infineon Technologies BSZ900N20NS3GATMA1
Infineon Technologies

Infineon BSZ900N20NS3GATMA1 N-Channel MOSFET, 200 V, 15.2 A

MPNBSZ900N20NS3GATMA1
End of Life

Infineon OptiMOS™ BSZ900N20NS3GATMA1, N-Channel MOSFET, 200 V Vdss, 15.2 A Id, 90 mOhm Rds(on) at 10 V, 11.6 nC Qg, -55 to 150 °C, PG-TSDSON-8 package.

$1.98Ref. price · indicative, final on quote
BSZ900N20NS3GATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSZ900N20NS3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15.2A (Tc)
Power dissipation62.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 30µA
Rds on (Max) @ id, vgs90mOhm @ 7.6A, 10V
Gate charge (Qg) (Max) @ vgs11.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds920 pF @ 100 V

Product details

Switching loss and gate-drive budget

Total gate charge is 11.6 nC at 10 V gate drive. For a 200 kHz switching frequency, the average gate-drive current is 2.3 mA — well within the capability of a standard gate-driver IC. Input capacitance is 920 pF at 100 V drain bias, which keeps the Miller plateau short and limits cross-conduction losses in hard-switched topologies.

Thermal limits and package footprint

Maximum power dissipation is 62.5 W at case temperature Tc=25 °C. The PG-TSDSON-8 package (8-PowerTDFN) has a large bottom-side thermal pad; the PCB copper area under the pad directly sets the junction-to-ambient thermal resistance. For continuous 15.2 A operation, a 2 oz copper pour of at least 2 in² is recommended to keep the junction below 125 °C.

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of BSZ900N20NS3G?

Maximum on-resistance is 90 mOhm at 7.6 A drain current with 10 V gate drive. This is the spec to use for worst-case conduction-loss calculations at the rated current.

Is BSZ900N20NS3GATMA1 RoHS compliant?

Yes, the part is ROHS3 compliant per the lifecycle record.