Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS™ BSZ900N15NS3GATMA1, N-Channel MOSFET, 150 V Vdss, 13 A Id, 90 mOhm Rds(on) at 10 V, 7 nC Qg, PG-TSDSON-8, -55°C to 150°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 8V, 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 38W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 20µA |
| Rds on (Max) @ id, vgs | 90mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 510 pF @ 75 V |
Maximum on-resistance is 90 mOhm at 10 A gate drive of 10 V — the 10 V drive voltage is the recommended operating point for minimum Rds(on). Gate charge totals 7 nC at 10 V, which keeps switching losses low in a 100–300 kHz hard-switched converter and lets a small gate driver handle the load. Input capacitance is 510 pF at 75 V drain-source, a moderate value that does not force a high-current driver.
