BSZ520N15NS3GATMA1

Infineon Technologies · OptiMOS™ Series

MOSFET N-CH 150V 21A 8TSDSON

Infineon Technologies BSZ520N15NS3GATMA1
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[IN STOCK] In Stock: 64 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSZ520N15NS3GATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation57W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 35µA
Rds on (Max) @ id, vgs52mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds890 pF @ 75 V
BSZ520N15NS3GATMA1
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