Infineon OptiMOS™ BSZ440N10NS3GATMA1, N-Channel MOSFET, 100 V Vdss, 44 mOhm Rds(on) max @ 12 A, 10 V, 5.3 A (Ta) / 18 A (Tc), PG-TSDSON-8 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 5.3A (Ta), 18A (Tc) |
| Power dissipation | 29W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.7V @ 12µA |
| Rds on (Max) @ id, vgs | 44mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.1 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 640 pF @ 50 V |
The Infineon BSZ440N10NS3GATMA1 is an OptiMOS™ N-channel power MOSFET rated for 100 V drain-source voltage and a continuous drain current of 5.3 A at 25°C ambient (Ta) or 18 A when the case temperature (Tc) is held at 25°C.
The 9.1 nC typical gate charge at 10 V keeps the gate-drive current requirement low — a 1 A driver can switch the gate in under 10 ns, enabling operation above 500 kHz without excessive driver dissipation.
The continuous drain current is rated at 5.3 A at 25°C ambient (Ta) and 18 A at 25°C case temperature (Tc).
The supplier device package is PG-TSDSON-8, an 8-lead PowerTDFN surface-mount package.