100 V N-channel in a TSDSON-8 footprint
The Infineon BSZ440N10NS3GATMA1 is an OptiMOS™ N-channel power MOSFET rated for 100 V drain-source voltage and a continuous drain current of 5.3 A at 25°C ambient (Ta) or 18 A when the case temperature (Tc) is held at 25°C.
The 9.1 nC typical gate charge at 10 V keeps the gate-drive current requirement low — a 1 A driver can switch the gate in under 10 ns, enabling operation above 500 kHz without excessive driver dissipation. The input capacitance (Ciss) is 640 pF at 50 V drain-source, which together with the low gate charge keeps the Miller plateau short and reduces cross-conduction in half-bridge topologies.