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Infineon Technologies BSZ42DN25NS3GATMA1
Infineon Technologies

BSZ42DN25NS3GATMA1 OptiMOS N-Channel MOSFET, 250V 5A

MPNBSZ42DN25NS3GATMA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 250 V Vdss, 5 A continuous drain, 425 mOhm Rds(on) at 10 V gate drive, 5.5 nC gate charge, PG-TSDSON-8 package, -55°C to 150°C junction temperature.

$1.41Ref. price · indicative, final on quote
BSZ42DN25NS3GATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSZ42DN25NS3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation33.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 13µA
Rds on (Max) @ id, vgs425mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs5.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds430 pF @ 100 V

Product details

Gate charge and switching speed — the 5.5 nC advantage

The BSZ42DN25NS3GATMA1: Total gate charge of 5.5 nC at 10 V reduces driver dissipation. Input capacitance is 430 pF at 100 V drain-source — a low value that further reduces the drive current needed per switching cycle. The combination of low Ciss and low Qg makes this part a candidate for GaN-driver replacement in legacy 250 V rails where the switching frequency is being pushed up.

Thermal and package reality for the layout engineer

The 8-PowerTDFN package dissipates 33.8 W at the case. The 4 V maximum gate threshold at 13 µA drain current requires a 10 V gate drive.

The OptiMOS series is Infineon's mainstream high-voltage trench platform, so PCN risk is low and second-source options exist in the same voltage class.

Frequently asked questions

Is BSZ42DN25NS3GATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.

What is a replacement for BSZ42DN25NS3GATMA1?

The IPD50R950CEAUMA1 is a CoolMOS CE N-channel MOSFET with a 500 V drain-source rating and 950 mOhm Rds(on). It is not a pin-compatible drop-in — the voltage class and package differ — but it serves a similar low-power offline switching role where higher voltage margin is needed.