Skip to main content
Infineon Technologies BSZ300N15NS5ATMA1

Infineon BSZ300N15NS5ATMA1 N-Channel MOSFET, 150 V, 32 A

MPNBSZ300N15NS5ATMA1
End of Life

Infineon OptiMOS 5 N-Channel MOSFET, 150 V Vdss, 32 A continuous drain, 30 mOhm Rds(on) at 10 V, 13 nC gate charge, PG-TSDSON-8-FL package, -55°C to 150°C junction temperature.

$2.59Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSZ300N15NS5ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation62.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4.6V @ 32µA
Rds on (Max) @ id, vgs30mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds950 pF @ 75 V

Product details

The BSZ300N15NS5ATMA1: It comes in a PG-TSDSON-8-FL package — a 5 mm × 6 mm footprint with an exposed drain pad for thermal management. The 150 V Vdss puts it squarely in the 48 V and 72 V bus applications: telecom rectifiers, battery-management systems, e-bike motor drives, and industrial auxiliary power supplies.

Gate drive and switching — sizing the driver to the gate charge

That means the gate-drive rail must deliver at least 8 V to turn the FET fully on; a standard 12 V gate-drive supply is fine, but a 5 V logic-level drive will not saturate this part to its rated Rds(on). The total gate charge is 13 nC at 10 V — a moderate figure that keeps switching losses manageable in the 100–300 kHz range typical of hard-switched DC-DC converters. An engineer sizing the gate-drive resistor should plan for a peak gate current that charges 13 nC within the target switching period.

Thermal design — junction temperature and power dissipation

That 150 °C Tj(max) is standard for this voltage class, but the real thermal limit in a 32 A continuous application is the board-level heat sinking: the PG-TSDSON-8-FL package relies on the PCB copper area under the exposed pad to pull heat out. A four-layer board with thermal vias under the pad is the baseline for sustaining 32 A at elevated ambient temperatures. The input capacitance is 950 pF at 75 V Vds, which is moderate and does not demand an aggressive pre-drive stage.

Lifecycle and sourcing posture

ROHS3 compliant. No official second-source cross-reference is listed, but the IPD50R950CEAUMA1 (CoolMOS CE, 500 V, 950 mOhm) is a different voltage and Rds(on) class — it is not a functional substitute for this 150 V / 30 mOhm part.

Frequently asked questions

What is the lead time for BSZ300N15NS5ATMA1?

Lead time is confirmed at quote time against the specific order quantity. As an active-production part, it is sourced through the independent distribution channel and quoted to order.