Infineon OptiMOS™ BSZ22DN20NS3GATMA1, N-Channel MOSFET, 200 V Vdss, 7 A Id, 225 mOhm Rds(on) @ 10 V, 5.6 nC Qg, PG-TSDSON-8 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 34W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 13µA |
| Rds on (Max) @ id, vgs | 225mOhm @ 3.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 430 pF @ 100 V |
Input capacitance is 430 pF at 100 V drain-source.
Housed in a PG-TSDSON-8 package (8-PowerTDFN), this is a surface-mount part with an exposed drain pad for thermal management.
ROHS3 compliant.
Maximum on-resistance is 225 mOhm at 3.5 A drain current with 10 V gate-to-source drive. This is the spec to use for worst-case conduction loss calculations at 25 °C junction; the actual Rds(on) rises with temperature per the normalised curve in the datasheet.
Yes — the supplier device package is PG-TSDSON-8, which is Infineon's designation for an 8-lead PowerTDFN with an exposed drain pad. The footprint matches standard TSDSON-8 land patterns; confirm the pad dimensions and pitch against your PCB layout before committing.
This 200 V N-channel MOSFET is suited for DC-DC converters, power supplies, and motor drives in the 48 V to 100 V bus range. The 225 mOhm Rds(on) and 5.6 nC gate charge make it a fit for medium-frequency switching where conduction and switching loss need to balance.