Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS™ BSZ22DN20NS3GATMA1, N-Channel MOSFET, 200 V Vdss, 7 A Id, 225 mOhm Rds(on) @ 10 V, 5.6 nC Qg, PG-TSDSON-8 package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 34W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 13µA |
| Rds on (Max) @ id, vgs | 225mOhm @ 3.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 430 pF @ 100 V |
Input capacitance is 430 pF at 100 V drain-source.
Housed in a PG-TSDSON-8 package (8-PowerTDFN), this is a surface-mount part with an exposed drain pad for thermal management.
ROHS3 compliant.
