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Infineon Technologies BSZ22DN20NS3GATMA1
Infineon Technologies

Infineon BSZ22DN20NS3GATMA1 N-Channel MOSFET, 200 V, 7 A

MPNBSZ22DN20NS3GATMA1
End of Life

Infineon OptiMOS™ BSZ22DN20NS3GATMA1, N-Channel MOSFET, 200 V Vdss, 7 A Id, 225 mOhm Rds(on) @ 10 V, 5.6 nC Qg, PG-TSDSON-8 package, -55°C to 150°C junction temperature.

$1.2Ref. price · indicative, final on quote
BSZ22DN20NS3GATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSZ22DN20NS3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 13µA
Rds on (Max) @ id, vgs225mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs5.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds430 pF @ 100 V

Product details

200 V, 7 A, 225 mOhm — what this OptiMOS™ N-channel delivers

The BSZ22DN20NS3GATMA1: Total gate charge is 5.6 nC at 10 V, which keeps switching losses low and allows a modest gate driver to hit the target frequency without excessive drive current. Input capacitance is 430 pF at 100 V drain-source.

Package and footprint — PG-TSDSON-8

Housed in a PG-TSDSON-8 package (8-PowerTDFN), this is a surface-mount part with an exposed drain pad for thermal management. Maximum power dissipation is 34 W at case temperature, but the real thermal limit depends on the PCB copper area and airflow.

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of BSZ22DN20NS3GATMA1?

Maximum on-resistance is 225 mOhm at 3.5 A drain current with 10 V gate-to-source drive. This is the spec to use for worst-case conduction loss calculations at 25 °C junction; the actual Rds(on) rises with temperature per the normalised curve in the datasheet.

Is BSZ22DN20NS3GATMA1 compatible with TSDSON-8 footprint?

Yes — the supplier device package is PG-TSDSON-8, which is Infineon's designation for an 8-lead PowerTDFN with an exposed drain pad. The footprint matches standard TSDSON-8 land patterns; confirm the pad dimensions and pitch against your PCB layout before committing.

What is the typical application for BSZ22DN20NS3GATMA1?

This 200 V N-channel MOSFET is suited for DC-DC converters, power supplies, and motor drives in the 48 V to 100 V bus range. The 225 mOhm Rds(on) and 5.6 nC gate charge make it a fit for medium-frequency switching where conduction and switching loss need to balance.