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Infineon Technologies BSZ180P03NS3GATMA1

Infineon BSZ180P03NS3GATMA1 P-Channel MOSFET, 30 V, 18 mOhm

MPNBSZ180P03NS3GATMA1
End of Life

Infineon OptiMOS™ BSZ180P03NS3GATMA1, P-Channel MOSFET, 30 V Vdss, 18 mOhm Rds(on) @ 20 A, 10 V, 9 A (Ta) / 39.6 A (Tc), PG-TSDSON-8, -55°C to 150°C.

$0.79Ref. price · indicative, final on quote
Infineon Technologies BSZ180P03NS3GATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSZ180P03NS3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C9A (Ta), 39.6A (Tc)
Power dissipation2.1W (Ta), 40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.1V @ 48µA
Rds on (Max) @ id, vgs18mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2220 pF @ 15 V

Product details

P-channel switch for load and OR-ing applications

The Infineon BSZ180P03NS3GATMA1 is a 30 V P-Channel MOSFET from the OptiMOS™ series, built on a metal-oxide trench technology. It delivers a maximum continuous drain current of 9 A at 25°C ambient (Ta) and 39.6 A when the case is held at 25°C (Tc), with an on-resistance of 18 mOhm max at a 20 A drain current and 10 V gate drive.

The PG-TSDSON-8 is a surface-mount PowerTDFN with an exposed thermal pad. The 2220 pF input capacitance at 15 V drain-source is typical for a 30 V P-channel in this package class; the gate driver should be placed close to the FET to minimize loop inductance.

No NRND or EOL notices are on record. There is no pin-compatible second source in the OptiMOS P-channel portfolio at this voltage and Rds(on) tier; the N-channel CoolMOS™ IPD50R950CEAUMA1 is a different polarity and voltage class (500 V N-Channel) and is not a functional substitute.

Frequently asked questions

What is the Rds(on) of BSZ180P03NS3GATMA1 at typical operating conditions?

The maximum Rds(on) is 18 mOhm at a drain current of 20 A with a 10 V gate drive. At 6 V gate drive the on-resistance will be higher — the datasheet specifies the drive voltage range for max and min Rds(on) as 6 V and 10 V respectively.

What package is BSZ180P03NS3GATMA1 and what is the footprint?

The BSZ180P03NS3GATMA1 is housed in a PG-TSDSON-8 package, which is an 8-lead PowerTDFN with an exposed thermal pad. The supplier device package is PG-TSDSON-8; the general package / case is 8-PowerTDFN.

Is there a replacement or equivalent for BSZ180P03NS3GATMA1?

No direct pin-compatible second source is listed in the OptiMOS P-channel family at this voltage and Rds(on) tier. The N-channel IPD50R950CEAUMA1 is a different polarity and 500 V class — not a functional substitute. For dual-sourcing options, review the Infineon OptiMOS P-channel 30 V portfolio for parts with similar Rds(on) and package.