Skip to main content
Infineon Technologies BSZ160N10NS3GATMA1

BSZ160N10NS3GATMA1 - Infineon Technologies

MPNBSZ160N10NS3GATMA1
End of Life

MOSFET N-CH 100V 8A/40A 8TSDSON

$1.79Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSZ160N10NS3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C8A (Ta), 40A (Tc)
Power dissipation2.1W (Ta), 63W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.5V @ 12µA
Rds on (Max) @ id, vgs16mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 50 V