BSZ15DC02KDHXTMA1
Infineon Technologies · HEXFET® Series
MOSFET N/P-CH 20V 5.1A 8TSDSON
[IN STOCK] In Stock: 163 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 5.1A, 3.2A |
| Power - max | 2.5W |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate, 2.5V Drive |
| Configuration | N and P-Channel Complementary |
| Qualification | AEC-Q101 |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.4V @ 110µA |
| Rds on (Max) @ id, vgs | 55mOhm @ 5.1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 2.8nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 419pF @ 10V |
BSZ15DC02KDHXTMA1
[ALLOC] verified