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Infineon Technologies BSZ150N10LS3GATMA1
Infineon Technologies

BSZ150N10LS3GATMA1 OptiMOS N-Ch 100V 40A MOSFET, 15mOhm

MPNBSZ150N10LS3GATMA1
End of Life

Infineon OptiMOS™ series, N-Channel MOSFET, 100 V Vdss, 40 A Id, 15 mOhm Rds(on) at 20 A, 10 V, 35 nC Qg, PG-TSDSON-8 package, -55°C to 150°C junction temperature.

$1.58Ref. price · indicative, final on quote
BSZ150N10LS3GATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSZ150N10LS3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation2.1W (Ta), 63W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.1V @ 33µA
Rds on (Max) @ id, vgs15mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 50 V

Product details

100 V N-channel — what the ratings mean for the BOM

The Infineon BSZ150N10LS3GATMA1 is an OptiMOS N-channel MOSFET rated for 100 V drain-source and 40 A continuous drain current at the case. The 15 mOhm on-resistance at 10 V gate drive keeps conduction losses low.

Active lifecycle — no LTB risk for new designs

The BSZ150N10LS3GATMA1 carries an Active lifecycle status. ROHS3 compliant, so it meets current European and global restriction requirements without a transition risk.

Sourcing and fit for the BOM line

For a BOM line that needs a 100 V, 40 A N-channel in a PG-TSDSON-8 footprint, the BSZ150N10LS3GATMA1 is a current-production choice. The 15 mOhm Rds(on) and 35 nC Qg are the numbers that decide the thermal and switching budget.

Frequently asked questions

What is the Rds(on) of BSZ150N10LS3GATMA1?

The maximum on-resistance is 15 mOhm at 20 A drain current with a 10 V gate drive.