Infineon OptiMOS™ series, N-Channel MOSFET, 100 V Vdss, 40 A Id, 15 mOhm Rds(on) at 20 A, 10 V, 35 nC Qg, PG-TSDSON-8 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 2.1W (Ta), 63W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.1V @ 33µA |
| Rds on (Max) @ id, vgs | 15mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2500 pF @ 50 V |
The Infineon BSZ150N10LS3GATMA1 is an OptiMOS N-channel MOSFET rated for 100 V drain-source and 40 A continuous drain current at the case.
ROHS3 compliant, so it meets current European and global restriction requirements without a transition risk.
The 15 mOhm Rds(on) and 35 nC Qg are the numbers that decide the thermal and switching budget.
The maximum on-resistance is 15 mOhm at 20 A drain current with a 10 V gate drive.