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Infineon Technologies BSZ146N10LS5ATMA1

BSZ146N10LS5ATMA1 N-Channel MOSFET, 100V 40A, OptiMOS 5

MPNBSZ146N10LS5ATMA1
End of Life

Infineon OptiMOS™ 5 BSZ146N10LS5ATMA1 N-Channel MOSFET, 100 V drain-source, 40 A continuous drain, 14.6 mOhm Rds(on) at 10 V, PG-TSDSON-8-FL package, surface mount.

$1.65Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™ 5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSZ146N10LS5ATMA1 specifications
ParameterValue
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation52W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureStandard
Case8-PowerTDFN
Vgs(th) (Max) @ id2.3V @ 23µA
Rds on (Max) @ id, vgs14.6mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs3.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1300 pF @ 50 V

Product details

100 V, 40 A N-Channel — OptiMOS™ 5 in a small footprint

It comes in a PG-TSDSON-8-FL surface-mount package, which keeps the board footprint small while handling up to 52 W of power dissipation.

That is the number you use to calculate I²R losses in the steady state. At lower gate voltages, the drive voltage range of 4.5 V to 10 V means you can run it from a 5 V logic rail, but the Rds(on) will be higher — the 10 V figure is the benchmark for minimum resistance. Gate charge is only 3.2 nC at 4.5 V, which keeps switching losses low in a 100–200 kHz converter. The input capacitance at 50 V drain is 1300 pF — modest enough that a standard gate driver can handle the switching edges without excessive ringing.

Frequently asked questions

What is the Vgs threshold of BSZ146N10LS5ATMA1?

The maximum gate threshold voltage is 2.3 V at a drain current of 23 µA.