200 V N-channel MOSFET in the OptiMOS™ family
The Infineon BSZ12DN20NS3GATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ series, rated for a drain-source voltage of 200 V and a continuous drain current of 11.3 A at a case temperature of 25°C. It is built with a standard MOSFET (Metal Oxide) technology and housed in an 8-PowerTDFN surface-mount package (PG-TSDSON-8 supplier device package). The part is designed for high-efficiency power conversion in applications such as DC-DC converters, AC-DC power supplies, motor drives, and battery management systems where a 200 V blocking voltage is required. Its operating junction temperature range of -55°C to 150°C suits it for industrial, telecom, and automotive under-hood environments.
125 mOhm on-resistance — conduction loss anchor
The maximum on-resistance of 125 mOhm is specified at a gate-source voltage of 10 V and a drain current of 5.7 A. This Rds(on) value directly sets the I²R conduction loss at the operating point; for a 5.7 A load, the dissipation is roughly 4 W, which must be managed within the 50 W package power limit. The 10 V gate-drive voltage is the recommended level to achieve the lowest Rds(on); driving with a lower Vgs will increase on-resistance and losses.
8.7 nC gate charge — switching speed indicator
A total gate charge of 8.7 nC at Vgs = 10 V means the gate driver must supply only a small charge per switching cycle. This keeps gate-drive losses low and allows faster switching transitions, which is important in a 200 V design where switching losses can dominate at higher frequencies. The input capacitance of 680 pF at Vds = 100 V confirms a moderate input load for the driver stage.
Active lifecycle — no near-term obsolescence risk
Listed as Active in the product lifecycle, with ROHS3 compliance. The OptiMOS™ series is an established Infineon portfolio, and this 200 V variant is a standard offering available through the distribution channel.
Packaging and tape details
Available in Tape & Reel (TR) or Cut Tape (CT) formats, surface-mount compatible. The 8-PowerTDFN package (PG-TSDSON-8) is a compact footprint for high-density power stages.