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Infineon Technologies BSZ123N08NS3GATMA1

Infineon BSZ123N08NS3GATMA1 N-Channel MOSFET, 80 V

MPNBSZ123N08NS3GATMA1
End of Life

Infineon OptiMOS series, N-Channel MOSFET, 80 V drain-source, 40 A continuous drain at case temperature, 12.3 mOhm Rds(on) at 10 V gate drive, PG-TSDSON-8 package, -55°C to 150°C junction temperature.

$1.52Ref. price · indicative, final on quote
Infineon Technologies BSZ123N08NS3GATMA1 datasheet (PDF)
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSZ123N08NS3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C10A (Ta), 40A (Tc)
Power dissipation2.1W (Ta), 66W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id3.5V @ 33µA
Rds on (Max) @ id, vgs12.3mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 40 V

Product details

80 V OptiMOS in a small footprint

The Infineon BSZ123N08NS3GATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS series, built for 80 V drain-source blocking in a PG-TSDSON-8 surface-mount package. It delivers 40 A continuous drain current at the case, with a maximum Rds(on) of 12.3 mOhm driven at 10 V gate voltage.

The pad layout is standard for this footprint class; verify the land pattern against the Infineon application note before committing the PCB.

Listed as Active with no end-of-life notice. ROHS3 compliant per Infineon's declaration. No known PCN at time of writing.

Frequently asked questions

Is BSZ123N08NS3GATMA1 RoHS compliant?

Yes, Infineon certifies this part as ROHS3 compliant.