80 V OptiMOS in a small footprint
The Infineon BSZ123N08NS3GATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS series, built for 80 V drain-source blocking in a PG-TSDSON-8 surface-mount package. It delivers 40 A continuous drain current at the case, with a maximum Rds(on) of 12.3 mOhm driven at 10 V gate voltage. The 25 nC gate charge keeps switching losses manageable in moderate-frequency converters, and the junction temperature range from -55°C to 150°C suits it for industrial and automotive environments where thermal cycling is a given.
Package and mounting
The PG-TSDSON-8 (8-PowerVDFN) is a surface-mount package with an exposed drain pad for thermal management. It is hand-solderable with a fine tip and some flux, but reflow is the intended assembly method. The pad layout is standard for this footprint class; verify the land pattern against the Infineon application note before committing the PCB.
Lifecycle and compliance
Listed as Active with no end-of-life notice. ROHS3 compliant per Infineon's declaration. No known PCN at time of writing. This part can be specified into new production without obsolescence risk.