P-channel power switch for load-side switching
The Infineon BSZ120P03NS3GATMA1 is a P-Channel MOSFET in the OptiMOS™ series, rated for 30 V drain-to-source and 12 mOhm maximum on-resistance at 20 A with a 10 V gate drive. It delivers 11 A continuous drain current at 25°C ambient (Ta) and 40 A when the case is held at 25°C (Tc), which tells you the die can handle the higher number if you can get the heat out through the PG-TSDSON-8 package bottom pad. Gate charge is 45 nC at 10 V, input capacitance 3360 pF at 15 V. Operating junction temperature spans -55°C to 150°C, so it fits industrial and automotive environments that see thermal cycling.
Rds(on) and drive voltage — what they mean for the BOM
The 12 mOhm Rds(on) at 10 V is the number for conduction-loss budgeting. The 2.1 W (Ta) and 52 W (Tc) power dissipation ratings tell you the board-level copper and airflow will decide whether you can run that current continuously. Drive voltage is specified with a maximum Rds(on) at 10 V and a minimum at 6 V. Below 6 V the on-resistance climbs; the ±25 V Vgs(max) gives headroom for transient spikes on the gate line.
Package and rework — PG-TSDSON-8
Package is 8-PowerTDFN, supplier device code PG-TSDSON-8. That's a surface-mount package with an exposed pad on the bottom for thermal and electrical connection to the PCB. Mounting type is surface mount; the package accepts Tape & Reel (TR) or Cut Tape (CT) for prototype quantities.
Lifecycle and compliance
Status is Active per the manufacturer — no end-of-life notice, no last-time-buy window to track. ROHS3 compliant, so it meets the current EU restriction directive without exemptions.