P-channel power switch for load-side switching
The Infineon BSZ120P03NS3GATMA1 is a P-Channel MOSFET in the OptiMOS™ series, rated for 30 V drain-to-source and 12 mOhm maximum on-resistance at 20 A with a 10 V gate drive. It delivers 11 A continuous drain current at 25°C ambient (Ta) and 40 A when the case is held at 25°C (Tc), which tells you the die can handle the higher number if you can get the heat out through the PG-TSDSON-8 package bottom pad.
The 2.1 W (Ta) and 52 W (Tc) power dissipation ratings tell you the board-level copper and airflow will decide whether you can run that current continuously. Drive voltage is specified with a maximum Rds(on) at 10 V and a minimum at 6 V. Below 6 V the on-resistance climbs; the ±25 V Vgs(max) gives headroom for transient spikes on the gate line.
Package and rework — PG-TSDSON-8
Package is 8-PowerTDFN, supplier device code PG-TSDSON-8.