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Infineon Technologies BSZ120P03NS3GATMA1

BSZ120P03NS3GATMA1 P-Channel MOSFET, 30V, 12mOhm, OptiMOS™

MPNBSZ120P03NS3GATMA1
End of Life

Infineon OptiMOS™ BSZ120P03NS3GATMA1, P-Channel MOSFET, 30 V Vdss, 12 mOhm Rds(on) at 20 A, 10 V, 11 A (Ta) / 40 A (Tc), PG-TSDSON-8, -55°C to 150°C.

$0.87Ref. price · indicative, final on quote
Infineon Technologies BSZ120P03NS3GATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSZ120P03NS3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C11A (Ta), 40A (Tc)
Power dissipation2.1W (Ta), 52W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.1V @ 73µA
Rds on (Max) @ id, vgs12mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3360 pF @ 15 V

Product details

P-channel power switch for load-side switching

The Infineon BSZ120P03NS3GATMA1 is a P-Channel MOSFET in the OptiMOS™ series, rated for 30 V drain-to-source and 12 mOhm maximum on-resistance at 20 A with a 10 V gate drive. It delivers 11 A continuous drain current at 25°C ambient (Ta) and 40 A when the case is held at 25°C (Tc), which tells you the die can handle the higher number if you can get the heat out through the PG-TSDSON-8 package bottom pad.

The 2.1 W (Ta) and 52 W (Tc) power dissipation ratings tell you the board-level copper and airflow will decide whether you can run that current continuously. Drive voltage is specified with a maximum Rds(on) at 10 V and a minimum at 6 V. Below 6 V the on-resistance climbs; the ±25 V Vgs(max) gives headroom for transient spikes on the gate line.

Package and rework — PG-TSDSON-8

Package is 8-PowerTDFN, supplier device code PG-TSDSON-8.

Frequently asked questions

What are the exact specifications of BSZ120P03NS3GATMA1?

It is a P-Channel MOSFET, 30 V Vdss, 12 mOhm max Rds(on) at 20 A and 10 V gate drive. Continuous drain current is 11 A at 25°C ambient (Ta) and 40 A at 25°C case (Tc). Operating junction temperature -55°C to 150°C. Package is PG-TSDSON-8 (8-PowerTDFN).

What footprint or package does BSZ120P03NS3GATMA1 use?

It uses the PG-TSDSON-8 package, which is an 8-lead PowerTDFN with an exposed pad. The supplier device package code is PG-TSDSON-8.

Does BSZ120P03NS3GATMA1 have a known issue with gate drive voltage?

No known issue. The gate threshold is 3.1 V max at 73 µA, so a 3.3 V logic drive may not fully enhance the channel. The recommended drive voltage for minimum Rds(on) is 10 V, with a minimum of 6 V. The gate is rated for ±25 V maximum.

Is BSZ120P03NS3GATMA1 RoHS compliant?

Yes, it is ROHS3 Compliant.