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Infineon Technologies BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - Infineon Technologies

MPNBSZ110N08NS5ATMA1
End of Life

MOSFET N-CH 80V 40A TSDSON

$1.11Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSZ110N08NS5ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.8V @ 22µA
Rds on (Max) @ id, vgs11mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs18.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1300 pF @ 40 V