10 mOhm Rds(on) — the number that drives the thermal design
The BSZ100N06NSATMA1: The 10 mOhm maximum on-resistance is specified at 20 A drain current and 10 V gate drive. At 25 °C junction, a 20 A load dissipates 4 W — well within the 36 W case-rated power dissipation. The actual Rds(on) rises with junction temperature; at 150 °C the on-resistance roughly doubles, so the 4 W loss at 20 A becomes 8 W. The thermal budget must account for this increase. The gate threshold voltage maximum is 3.3 V at 14 µA drain current. The drive voltage range for minimum Rds(on) is 6 V to 10 V.
Gate charge and switching — 15 nC at 10 V
The total gate charge is 15 nC at 10 V gate drive. The input capacitance is 1075 pF at 30 V Vds.
Package and thermal path — PG-TSDSON-8-FL
The 8-PowerTDFN package (PG-TSDSON-8-FL) is a surface-mount package with an exposed drain pad. The junction-to-ambient thermal resistance is 2.1 W per °C (Ta) and 36 W per °C (Tc).