10 mOhm Rds(on) — the number that drives the thermal design
At 25 °C junction, a 20 A load dissipates 4 W — well within the 36 W case-rated power dissipation. The actual Rds(on) rises with junction temperature; at 150 °C the on-resistance roughly doubles, so the 4 W loss at 20 A becomes 8 W. The thermal budget must account for this increase. The gate threshold voltage maximum is 3.3 V at 14 µA drain current. The drive voltage range for minimum Rds(on) is 6 V to 10 V.
Gate charge and switching — 15 nC at 10 V
The input capacitance is 1075 pF at 30 V Vds.
Package and thermal path — PG-TSDSON-8-FL
The junction-to-ambient thermal resistance is 2.1 W per °C (Ta) and 36 W per °C (Tc).