60 V, 10 mOhm N-channel — the conduction-loss floor
The Infineon BSZ100N06LS3GATMA1 is an N-channel OptiMOS power MOSFET rated for 60 V drain-source and a continuous drain current of 11 A at 25°C ambient (20 A at case temperature). The headline 10 mOhm Rds(on) at 10 V gate drive sets the conduction loss floor for a synchronous buck or load switch — at 10 A that's 1 W dissipation before switching losses.
Gate charge and switching profile
Total gate charge is 45 nC at 10 V, which means a 1 A gate driver can switch this FET in about 45 ns — fast enough for 200–500 kHz converters. The 3500 pF input capacitance at 30 V drain-source is the capacitive load the driver sees; pair it with a driver that can source at least 2 A peak to keep the switching edges clean.
