BSZ100N03MSGATMA1

Infineon Technologies · OptiMOS™ Series

MOSFET N-CH 30V 10A/40A 8TSDSON

Infineon Technologies BSZ100N03MSGATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSZ100N03MSGATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10A (Ta), 40A (Tc)
Power dissipation2.1W (Ta), 30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs9.1mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 15 V
BSZ100N03MSGATMA1
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