60V 46A N-channel — OptiMOS™ 5 logic-level gate drive
The key spec for BOM fit is the 9.9mOhm maximum on-resistance at 20A and 10V gate drive, but the part is also characterized at 4.5V drive — meaning it can be driven directly from a 5V logic rail or a low-voltage gate driver without needing a 10V supply. Gate charge is 3.1nC at 4.5V, which keeps switching losses low in high-frequency DC-DC converters and synchronous rectification stages.
Rds(on) at 4.5V — why it matters for your gate driver budget
Unlike many 60V MOSFETs that only specify Rds(on) at 10V, the BSZ099N06LS5ATMA1 is fully characterized with a 4.5V drive voltage. This means a 5V PWM controller or a 3.3V-to-5V level-shifted gate signal can fully enhance the channel without a separate 10V bias rail. The 9.9mOhm max at 10V is the headline figure, but the part is designed to deliver usefully low resistance at the lower gate voltage typical of modern POL converters. The IPD50R950CEAUMA1 is a 500V CoolMOS™ CE part — same N-channel polarity, but 500V breakdown with 950mOhm Rds(on) and 10.5nC gate charge. It is not a functional substitute for a 60V logic-level switching MOSFET; the voltage class and on-resistance target completely different applications (high-voltage auxiliary supplies vs low-voltage high-current rails).
It is ROHS3 compliant and currently in volume production. The PG-TSDSON-8-FL package is an 8-lead PowerTDFN with an exposed die pad. The 36W power dissipation rating assumes the PCB copper area under the pad matches the layout guidelines — without the thermal via array and sufficient copper spread, the actual dissipation ceiling drops significantly.