100V N-channel in a small can — what the ratings mean for your board
The Infineon BSZ097N10NS5ATMA1 is an OptiMOS N-channel power MOSFET rated for 100 V drain-source, with a maximum Rds(on) of 9.7 mOhm at 10 V gate drive and 20 A drain current. Gate charge is 28 nC at 10 V. Package is the PG-TSDSON-8-FL, an 8-lead PowerTDFN with an exposed drain pad. That pad is the primary thermal path — 69 W dissipation at the case (Tc) versus 2.1 W in still air (Ta) tells you this part needs a copper land and vias to the inner layers to deliver the 40 A continuous drain rating. Without that thermal relief, the package-limited 8 A figure is the practical ceiling.
Temperature range and environment
Operating junction temperature spans -55 to 150 °C, which covers automotive under-hood, industrial motor-drive cabinets, and military-spec enclosures without derating. The wide range also simplifies qualification for a single BOM across multiple thermal environments.
Gate drive and switching
The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V. Input capacitance is 2080 pF at 50 V drain-source.
Lifecycle and sourcing
This part carries an active lifecycle status and is ROHS3 compliant. For a BOM freeze, this is a low-LTB-risk line item.