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Infineon Technologies BSZ0909NSATMA1

Infineon BSZ0909NSATMA1 N-Channel MOSFET, 34V, 12mOhm

MPNBSZ0909NSATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 34V Vdss, 12mOhm Rds(on) at 10V, 9A (Ta) / 36A (Tc) continuous drain, PG-TSDSON-8 package, -55°C to 150°C junction temperature, Active, ROHS3 compliant.

$0.62Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSZ0909NSATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage34 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9A (Ta), 36A (Tc)
Power dissipation2.1W (Ta), 25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs12mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1310 pF @ 15 V

Product details

What the 12 mOhm Rds(on) means for your switching loss budget

The Infineon BSZ0909NSATMA1 is an N-channel OptiMOS MOSFET rated for 34 V drain-source and a maximum on-resistance of 12 mOhm at 20 A with a 10 V gate drive.

Gate drive and switching — 17 nC Qg keeps the driver happy

Total gate charge is 17 nC at 10 V. Input capacitance is 1310 pF at 15 V Vds.

Maximum dissipation is 2.1 W at ambient and 25 W at case.

Package and footprint — PG-TSDSON-8 with exposed pad

Supplier device package is PG-TSDSON-8, an 8-lead PowerTDFN with a large exposed drain pad. The package is surface-mount, compatible with standard reflow profiles. Tape & Reel and Cut Tape options are available for prototyping and production.

Infineon continues production in the OptiMOS family. ROHS3 compliant. For BOM planning, this part has no imminent LTB risk.

Frequently asked questions

Is BSZ0909NSATMA1 obsolete or still active?

The part is Active with no NRND or EOL flags. Infineon continues production in the OptiMOS series. No last-time-buy risk at this time.

What is the Rds(on) of BSZ0909NSATMA1 at 10V?

Maximum Rds(on) is 12 mOhm at 20 A drain current with a 10 V gate drive. The drive voltage range for minimum Rds(on) is 4.5 V to 10 V.

What is the maximum drain current of BSZ0909NSATMA1?

Continuous drain current is 9 A at ambient temperature (Ta) and 36 A at case temperature (Tc). The 36 A figure requires the exposed pad to be soldered to a copper plane for adequate thermal dissipation.

Is BSZ0909NSATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.